ESD7181MUT5G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ESD7181MUT5G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW17442910
Category

TVS Diode
Package

DFN-2
Description

ON SEMICONDUCTOR ESD7181MUT5G ESD Protection Device, 35V, X3DFN, 2Pins, 18.5V, 0.25W(1/4W) New
Documentation

Datasheet

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ESD7181MUT5G Specifications

Attribute	Attribute Value

Part Number	ESD7181MUT5G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW17442910
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	DFN-2
Operating Voltage	18.5 V
Capacitance	0.6 pF
Breakdown Voltage	20.5 V
Number of Channels	1 Channel
Number of Positions	2 Position
Power Dissipation	250 mW
Clamping Voltage	35 V
Min Breakdown Voltage	20.5 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250 mW
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Size-Height	0.28 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The ESD7181 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications.
Features
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Low Capacitance 0.3pF (typical)
Low Clamping Voltage
Small Body Outline Dimensions: (0.62x0.32mm)
Low Body Height: (0.3mm)
Working Voltage (+/-18.5V)
Low Leakage <1nA (typical)
Low Insertion Loss (-0.335dB at 8,5GHz)
Low Dynamic Resistanc: <1ohm
IEC61000-4-2 Level 4 ESD Protection
Pb-Free, Halogen Free / BFR Free and are RoHS Compliant

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