ESM3030DV - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ESM3030DV
Manufacturer

ST Microelectronics
ChipWorker Part#

CW14161350
Category

BJT Transistor, BJT
Package

SOT-227-4
Description

ISOTOP NPN 300V 100A
Documentation

Datasheet

ESM3030DV Global Supplier

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ESM3030DV Specifications

Attribute	Attribute Value

Part Number	ESM3030DV
Manufacturer	ST Microelectronics
ChipWorker Part#	CW14161350
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	300 V
Current Rating	100 A
Load Current	100 A
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	225 W
Breakdown Voltage (Collector to Emitter)	300 V
Continuous Collector Current	100A
hFE Min	300 @85A, 5V
Input Power (Max)	225 W
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225000 mW
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Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The ESM3030DV is a NPN Darlington Power Module designed for welding equipment, SMPS and UPS as well as DC/DC and DC/AC converters. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
High current power bipolar module
Very low Rth junction case
Specified accidental overload areas
Ultra fast freewheeling diode
Fully insulated
Easy to mount
Low internal parasitic inductance
Well-controlled hFE parameter for increased reliability

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
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- Electrical testing
- Surface testing

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