FCD5N60TM - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFCD5N60TM
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ManufacturerFairchild
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ChipWorker Part#CW13917346
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CategoryMOSFET, MOSFET Transistor
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PackageTO-252-3
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DescriptionPower Field-Effect Transistor, 4.6A I(D), 600V, 0.95Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3
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DocumentationDatasheet
Payment Methods and Delivery
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FCD5N60TM Global Supplier
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FCD5N60TM Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FCD5N60TM |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW13917346 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 4.60 A |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.95 Ω |
| Polarity | N-Channel |
| Power Dissipation | 54 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 600 pF |
| Gate Charge | 16.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 4.60 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 600pF @25V(Vds) |
| Input Power (Max) | 54 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 54W (Tc) |
| expand all | |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FCD5N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 16nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Delivery
Chipworker Certification
Ordering Information
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