FCD7N60TM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FCD7N60TM
Manufacturer

Fairchild
ChipWorker Part#

CW79240618
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

FAIRCHILD SEMICONDUCTOR FCD7N60TM Power MOSFET, N Channel, 7A, 600V, 0.53Ω, 10V, 5V
Documentation

Datasheet

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FCD7N60TM Specifications

Attribute	Attribute Value

Part Number	FCD7N60TM
Manufacturer	Fairchild
ChipWorker Part#	CW79240618
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	7.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.53 Ω
Polarity	N-Channel
Power Dissipation	83 W
Threshold Voltage	5 V
Input Capacitance	920 pF
Gate Charge	30.0 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	7.00 A
Rise Time	55 ns
Input Capacitance (Ciss)	920pF @25V(Vds)
Input Power (Max)	83 W
Fall Time	32 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FCD7N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Ultra low gate charge (Qg = 23nC)
Low effective output capacitance (Coss.eff = 60pF)
100% avalanche tested

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