FCPF190N60 - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFCPF190N60
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ManufacturerFairchild
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ChipWorker Part#CW82321336
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CategoryHigh Voltage MOS Transistor
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PackageTO-220-3
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DescriptionFAIRCHILD SEMICONDUCTOR FCPF190N60 Power MOSFET, N Channel, 20.2A, 600V, 0.17Ω, 10V, 2.5V
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DocumentationDatasheet
Payment Methods and Delivery
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FCPF190N60 Global Supplier
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FCPF190N60 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FCPF190N60 |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW82321336 |
| Category | High Voltage MOS Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.17 Ω |
| Polarity | N-Channel |
| Power Dissipation | 39 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.2A |
| Input Capacitance (Ciss) | 2950pF @25V(Vds) |
| Input Power (Max) | 39 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 39W (Tc) |
| expand all | |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 16.07 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| HK STC License | NLR |
Product Description
- The FCPF190N60 is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes advanced charge-balance technology for outstandingly low ON-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dV/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
- Ultra low gate charge (Qg = 57nC)
- Low effective output capacitance (Coss.eff = 160pF)
- 100% avalanche tested
Delivery
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Ordering Information
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