FCX495TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FCX495TA
Manufacturer

Diodes
ChipWorker Part#

CW7372166
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 150V 1A 1000mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet

FCX495TA Global Supplier

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FCX495TA Specifications

Attribute	Attribute Value

Part Number	FCX495TA
Manufacturer	Diodes
ChipWorker Part#	CW7372166
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89-3
Frequency	100 MHz
Voltage Rating (DC)	150 V
Current Rating	100 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	1A
hFE Min	100 @1mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.5 mm
Size-Width	2.5 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Jump-start your electronic circuit design with this versatile NPN FCX495TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 7 V.

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