FCX658ATA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FCX658ATA
Manufacturer

Diodes
ChipWorker Part#

CW13979046
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

GP BJT NPN 400V 0.5A 4Pin(3+Tab) SOT89
Documentation

Datasheet

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FCX658ATA Specifications

Attribute	Attribute Value

Part Number	FCX658ATA
Manufacturer	Diodes
ChipWorker Part#	CW13979046
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89-3
Frequency	50 MHz
Voltage Rating (DC)	400 V
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	0.5A
hFE Min	35 @200mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	35
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.5 mm
Size-Width	2.5 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The FCX658ATA is a NPN silicon planar medium power Bipolar Transistor offers high voltage and optimised hfe characterised up-to 200mA. It is suitable for telephone dialler circuits, hook switches for modems, pre-drivers within HID lamp ballasts and (SLIC) subscriber line interface cards.
0.5A Continuous current
-55 to 150°C Operating temperature range

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