FDB28N30TM - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDB28N30TM
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ManufacturerFairchild
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ChipWorker Part#CW13672940
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionFAIRCHILD SEMICONDUCTOR FDB28N30TM MOSFET Transistor, N Channel, 28A, 300V, 108mohm, 10V, 5V
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DocumentationDatasheet
Payment Methods and Delivery
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FDB28N30TM Global Supplier
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FDB28N30TM Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDB28N30TM |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW13672940 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 108 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2.25 nF |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 28.0 A |
| Rise Time | 135 ns |
| Input Capacitance (Ciss) | 2250pF @25V(Vds) |
| Input Power (Max) | 250 W |
| Fall Time | 69 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| expand all | |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
Product Description
- The FDB28N30TM is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
- Improved dV/dt capability
- 100% Avalanche tested
- Fast switching
- 39nC Typical low gate charge
- 35pF Typical low Crss
Delivery
Chipworker Certification
Ordering Information
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