FDC3601N - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC3601N
Manufacturer

Fairchild
ChipWorker Part#

CW18196929
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

FAIRCHILD SEMICONDUCTOR FDC3601N Dual MOSFET, Dual N Channel, 1A, 100V, 500mohm, 10V, 2.6V
Documentation

Datasheet

FDC3601N Global Supplier

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FDC3601N Specifications

Attribute	Attribute Value

Part Number	FDC3601N
Manufacturer	Fairchild
ChipWorker Part#	CW18196929
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Voltage Rating (DC)	100 V
Current Rating	1.00 A
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	500 mΩ
Polarity	N-Channel
Power Dissipation	960 mW
Threshold Voltage	2.6 V
Input Capacitance	153 pF
Gate Charge	3.70 nC
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.00 A
Rise Time	4 ns
Input Capacitance (Ciss)	153pF @50V(Vds)
Input Power (Max)	700 mW
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	960 mW
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDC3601N is a 100V Dual N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Low gate charge
High performance trench technology for extremely low RDS (on)

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