FDC610PZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC610PZ
Manufacturer

Fairchild
ChipWorker Part#

CW15808759
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

P-Channel 30V 42mOhm 24NC SMT PowerTrench Mosfet - SSOT-6
Documentation

Datasheet

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FDC610PZ Specifications

Attribute	Attribute Value

Part Number	FDC610PZ
Manufacturer	Fairchild
ChipWorker Part#	CW15808759
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.036 Ω
Polarity	P-Channel
Power Dissipation	1.6 W
Threshold Voltage	2.2 V
Input Capacitance	1.005 nF
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	4.90 mA
Rise Time	4 ns
Input Capacitance (Ciss)	1005pF @15V(Vds)
Input Power (Max)	800 mW
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Weight	0.004535924 kg
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDC610PZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
High performance Trench technology for extremely low RDS (ON)
17nC Typical low gate charge

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