FDC638APZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC638APZ
Manufacturer

Fairchild
ChipWorker Part#

CW9614786
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

MOSFET Transistor, P Channel, 4.5A, -20V, 0.037Ω, 12V, -800mV
Documentation

Datasheet

FDC638APZ Global Supplier

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FDC638APZ Specifications

Attribute	Attribute Value

Part Number	FDC638APZ
Manufacturer	Fairchild
ChipWorker Part#	CW9614786
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Voltage Rating (DC)	-12.0 V
Current Rating	-4.50 A
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.037 Ω
Polarity	P-Channel
Power Dissipation	1.6 W
Gate Charge	12.0 nC
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	-4.50 A
Rise Time	20 ns
Input Capacitance (Ciss)	1000pF @10V(Vds)
Input Power (Max)	800 mW
Fall Time	47 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6W (Ta)
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Size-Length	3 mm
Size-Width	1.6 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The FDC638APZ is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
High performance Trench technology for extremely low RDS (ON)
8nC Typical low gate charge

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