FDC658AP - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC658AP
Manufacturer

Fairchild
ChipWorker Part#

CW11090529
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

FAIRCHILD SEMICONDUCTOR FDC658AP MOSFET Transistor, P Channel, 4mA, -30V, 0.044Ω, 10V, 1.8V
Documentation

Datasheet

FDC658AP Global Supplier

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FDC658AP Specifications

Attribute	Attribute Value

Part Number	FDC658AP
Manufacturer	Fairchild
ChipWorker Part#	CW11090529
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Power Rating	1.6 W
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.044 Ω
Polarity	P-Channel
Power Dissipation	1.6 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	4.00 mA
Rise Time	12 ns
Input Capacitance (Ciss)	470pF @15V(Vds)
Input Power (Max)	800 mW
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDC658AP is a logic level single P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
Low gate charge
High performance Trench technology for extremely low RDS (ON)

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