FDC855N - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDC855N
Manufacturer

Fairchild
ChipWorker Part#

CW48743027
Category

MOSFET, MOSFET Transistor
Package

TSOT-23-6
Description

FAIRCHILD SEMICONDUCTOR FDC855N MOSFET Transistor, N Channel, 6.1A, 30V, 0.0207Ω, 10V, 2V
Documentation

Datasheet

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FDC855N Specifications

Attribute	Attribute Value

Part Number	FDC855N
Manufacturer	Fairchild
ChipWorker Part#	CW48743027
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.0207 Ω
Polarity	N-Channel
Power Dissipation	1.6 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	6.1A
Rise Time	2 ns
Input Capacitance (Ciss)	655pF @15V(Vds)
Input Power (Max)	800 mW
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6W (Ta)
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Size-Length	3 mm
Size-Width	1.7 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FDC855N is a logic level single N-channel MOSFET produced utilizing Fairchild Semiconductor"s advanced PowerTrench® process. It is an efficient solution for low voltage and battery powered applications. It possesses minimized ON-state resistance to optimize the power consumption and ideal for applications where in-line power loss is critical.

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