FDD5690 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDD5690
Manufacturer

Fairchild
ChipWorker Part#

CW13407921
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 60V 30A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

FDD5690 Global Supplier

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FDD5690 Specifications

Attribute	Attribute Value

Part Number	FDD5690
Manufacturer	Fairchild
ChipWorker Part#	CW13407921
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	60.0 V
Current Rating	30.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel
Power Dissipation	3.2 W
Threshold Voltage	2.5 V
Input Capacitance	1.11 nF
Gate Charge	23.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	9 ns
Input Capacitance (Ciss)	1110pF @25V(Vds)
Input Power (Max)	1.3 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.2W (Ta), 50W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDD5690 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
23nC Typical low gate charge

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