FDG313N - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDG313N
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ManufacturerFairchild
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ChipWorker Part#CW80265113
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CategoryMOSFET, MOSFET Transistor
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PackageSC-70-6
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DescriptionTrans MOSFET N-CH 25V 0.95A 6Pin SC-70 T/R
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DocumentationDatasheet
Payment Methods and Delivery
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FDG313N Global Supplier
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FDG313N Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDG313N |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW80265113 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 950 mA |
| Drain to Source Resistance (on) (Rds) | 0.45 Ω |
| Polarity | N-Channel |
| Power Dissipation | 750 mW |
| Threshold Voltage | 800 mV |
| Input Capacitance | 50.0 pF |
| Gate Charge | 1.64 nC |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 950 mA, 950 mA |
| Rise Time | 8.5 ns |
| Input Capacitance (Ciss) | 50pF @10V(Vds) |
| Input Power (Max) | 480 mW |
| Fall Time | 8.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750mW (Ta) |
| expand all | |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FDG313N is a N-channel enhancement-mode Digital FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. It is suitable for use in load switch and battery protection.
- Very low level gate drive requirements allowing direct operation
- Compact industry standard surface-mount package
Delivery
Chipworker Certification
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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