FDG6301N - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDG6301N
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ManufacturerFairchild
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ChipWorker Part#CW13516800
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CategoryMOSFET, MOSFET Transistor
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PackageSC-70-6
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DescriptionTrans MOSFET N-CH 25V 0.22A 6Pin SC-70 T/R
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DocumentationDatasheet
Payment Methods and Delivery
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FDG6301N Global Supplier
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FDG6301N Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDG6301N |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW13516800 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 220 mA |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 4 Ω |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 300 mW |
| Threshold Voltage | 850 mV |
| Input Capacitance | 9.50 pF |
| Gate Charge | 290 pC |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 8.00 V |
| Continuous Drain Current (Ids) | 220 mA |
| Rise Time | 4.5 ns |
| Input Capacitance (Ciss) | 9.5pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 3.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.3 W |
| expand all | |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
- Gate-source Zener for ESD ruggedness (>6kV human body model)
- Compact industry standard surface-mount-package
Delivery
Chipworker Certification
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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