FDG6322C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDG6322C
Manufacturer

Fairchild
ChipWorker Part#

CW11418073
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

Trans MOSFET N/P-CH 25V 0.22A/0.41A 6Pin SC-70 T/R
Documentation

Datasheet

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FDG6322C Specifications

Attribute	Attribute Value

Part Number	FDG6322C
Manufacturer	Fairchild
ChipWorker Part#	CW11418073
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Current Rating	220 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	2.6 Ω
Polarity	N-Channel, P-Channel, Dual N-Channel, Dual P-Channel
Power Dissipation	300 mW
Threshold Voltage	850 mV
Input Capacitance	114 pF
Gate Charge	1.40 nC
Drain to Source Voltage (Vds)	25 V
Breakdown Voltage (Drain to Source)	±25.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	220 mA
Rise Time	8.00 ns
Input Capacitance (Ciss)	9.5pF @10V(Vds)
Input Power (Max)	300 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.3 W
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDG6322C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Very small package outline
Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
Gate-source Zener for ESD ruggedness

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