FDH44N50 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDH44N50
Manufacturer

Fairchild
ChipWorker Part#

CW12120066
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Trans MOSFET N-CH 500V 44A 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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FDH44N50 Specifications

Attribute	Attribute Value

Part Number	FDH44N50
Manufacturer	Fairchild
ChipWorker Part#	CW12120066
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	44.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.11 Ω
Polarity	N-Channel
Power Dissipation	750 W
Threshold Voltage	3.15 V
Input Capacitance	5.34 nF
Gate Charge	90.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	44.0 A
Rise Time	84 ns
Input Capacitance (Ciss)	5335pF @25V(Vds)
Input Power (Max)	750 W
Fall Time	79 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	750W (Tc)
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Size-Length	15.87 mm
Size-Width	4.82 mm
Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDH44N50 is a 500V N-channel Power MOSFET based on planar stripe and DMOS technology. This SMPS series MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
Low gate charge results in simple drive requirement
Improved gate, avalanche and high reapplied dv/dt ruggedness
Reduced miller capacitance and low input capacitance
Improved switching speed with low EMI
175°C Rated junction temperature

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