FDMS3660S - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDMS3660S
Manufacturer

Fairchild
ChipWorker Part#

CW55112529
Category

MOSFET, MOSFET Transistor
Package

Power-56-8
Description

Trans MOSFET N-CH 30V 13A/30A 8Pin Power 56 T/R
Documentation

Datasheet

FDMS3660S Global Supplier

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FDMS3660S Specifications

Attribute	Attribute Value

Part Number	FDMS3660S
Manufacturer	Fairchild
ChipWorker Part#	CW55112529
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Power-56-8
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0013 Ω
Polarity	Dual N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	13A/30A
Input Capacitance (Ciss)	1765pF @15V(Vds)
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	5.9 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FDMS3660S is a dual N-channel Asymmetric MOSFET suitable for use with computing, general purpose point of load and notebook VCORE applications. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout (lower circuit inductance & reduced switch node ringing)

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