FDMS6673BZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDMS6673BZ
Manufacturer

Fairchild
ChipWorker Part#

CW77125382
Category

MOSFET, MOSFET Transistor
Package

Power-56
Description

FAIRCHILD SEMICONDUCTOR FDMS6673BZ MOSFET Transistor, P Channel, -28A, -30V, 0.0052Ω, -10V, -1.8V
Documentation

Datasheet

FDMS6673BZ Global Supplier

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FDMS6673BZ Specifications

Attribute	Attribute Value

Part Number	FDMS6673BZ
Manufacturer	Fairchild
ChipWorker Part#	CW77125382
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Power-56
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0052 Ω
Polarity	P-Channel
Power Dissipation	73 W
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	15.2A
Rise Time	28 ns
Input Capacitance (Ciss)	5915pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	79 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 73W (Tc)
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Size-Length	5 mm
Size-Width	6 mm
Size-Height	1.05 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
MSL1 robust package design
8kV Typical HBM ESD protection level

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