FDN360P - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDN360P
Manufacturer

Fairchild
ChipWorker Part#

CW6743763
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

Fsc Fdn360p Trans Mosfet p-Ch 30V 2A 3Pin Superso t Fetmosfet Sot23
Documentation

Datasheet

FDN360P Global Supplier

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FDN360P Specifications

Attribute	Attribute Value

Part Number	FDN360P
Manufacturer	Fairchild
ChipWorker Part#	CW6743763
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	-30.0 V
Current Rating	-2.00 A
Power Rating	500 mW
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.08 Ω
Polarity	P-Channel
Power Dissipation	500 mW
Threshold Voltage	20 V
Input Capacitance	298 pF
Gate Charge	6.20 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	-30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	13 ns
Input Capacitance (Ciss)	298pF @15V(Vds)
Input Power (Max)	460 mW
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.5 W
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDN360P from Fairchild is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.
High performance trench technology for extremely low Rds(ON)
Low gate charge typically 6.2nC
Drain to source voltage (Vds) of -30V
Gate to source voltage of ±20V
Continuous drain current (Id) of -2A at 25°C
Power dissipation (Pd) of 500mW
Low on state resistance of 100mohm at Vgs -4.5V
Operating temperature range -55°C to 150°C

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