FDS5670 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS5670
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5210150
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Small Signal Field-Effect Transistor, 10A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Documentation

Datasheet

FDS5670 Global Supplier

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FDS5670 Specifications

Attribute	Attribute Value

Part Number	FDS5670
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5210150
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	14 mΩ
Power Dissipation	2.5 W
Threshold Voltage	2.4 V
Drain to Source Voltage (Vds)	60 V
Rise Time	10 ns
Input Capacitance (Ciss)	2900pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	23 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The FDS5670 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
Low gate charge
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability

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