FDS6675BZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6675BZ
Manufacturer

Fairchild
ChipWorker Part#

CW10050708
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET P-CH 30V 11A 8Pin SOIC T/R
Documentation

Datasheet

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FDS6675BZ Specifications

Attribute	Attribute Value

Part Number	FDS6675BZ
Manufacturer	Fairchild
ChipWorker Part#	CW10050708
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0108 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	11.0 mA
Rise Time	7.8 ns
Input Capacitance (Ciss)	2470pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6675BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±5.4kV typical
High performance trench technology for extremely low RDS (on)
High power and current handling capability
ESD sensitive device, take proper precaution while handling the device.

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