FDS6679AZ - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6679AZ
Manufacturer

ON Semiconductor
ChipWorker Part#

CW430565
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
Documentation

Datasheet

FDS6679AZ Global Supplier

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FDS6679AZ Specifications

Attribute	Attribute Value

Part Number	FDS6679AZ
Manufacturer	ON Semiconductor
ChipWorker Part#	CW430565
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0077 Ω
Power Dissipation	2.5 W
Threshold Voltage	1.9 V
Drain to Source Voltage (Vds)	30 V
Rise Time	15 ns
Input Capacitance (Ciss)	2890pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	92 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The FDS6679AZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs.
High performance Trench technology for extremely low RDS (ON)
High power and current handing capability
6kV Typical HBM ESD protection level

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