FDS6690AS - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6690AS
Manufacturer

Fairchild
ChipWorker Part#

CW47228221
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 10A 8Pin SOIC T/R
Documentation

Datasheet

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FDS6690AS Specifications

Attribute	Attribute Value

Part Number	FDS6690AS
Manufacturer	Fairchild
ChipWorker Part#	CW47228221
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	10.0 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.01 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.6 V
Input Capacitance	910 pF
Gate Charge	16.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	5 ns
Input Capacitance (Ciss)	910pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6690AS is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
16nC Typical low gate charge

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