FDS6699S - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDS6699S
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ManufacturerFairchild
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ChipWorker Part#CW14883750
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CategoryMOSFET, MOSFET Transistor
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PackageSOIC-8
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DescriptionTrans MOSFET N-CH 30V 21A 8Pin SOIC N T/R
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DocumentationDatasheet
Payment Methods and Delivery
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FDS6699S Global Supplier
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FDS6699S Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDS6699S |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW14883750 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 21.0 A |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 3.6 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 mW |
| Threshold Voltage | 1.4 V |
| Input Capacitance | 3.61 nF |
| Gate Charge | 65.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 21.0 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 3610pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| expand all | |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET™ technology.
- High performance Trench technology for extremely low RDS (ON) and fast switching
- High power and current handling capability
- 100% RG (gate resistance) tested
Delivery
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Ordering Information
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