FDS6890A - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6890A
Manufacturer

Fairchild
ChipWorker Part#

CW13485496
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 20V 7.5A 8Pin SOIC N T/R
Documentation

Datasheet

FDS6890A Global Supplier

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FDS6890A Specifications

Attribute	Attribute Value

Part Number	FDS6890A
Manufacturer	Fairchild
ChipWorker Part#	CW13485496
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	20.0 V
Current Rating	7.50 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.013 Ω
Polarity	N-Channel, Dual N-Channel
Power Dissipation	2 W
Threshold Voltage	800 mV
Input Capacitance	2.13 nF
Gate Charge	23.0 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	7.50 A
Rise Time	26 ns
Input Capacitance (Ciss)	2130pF @10V(Vds)
Input Power (Max)	900 mW
Fall Time	23 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6890A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
Fast switching speed
Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
±8V Gate to source voltage
7.5A Continuous drain current
20A Pulsed drain current

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