FDS8880 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS8880
Manufacturer

Fairchild
ChipWorker Part#

CW14174368
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 11.6A 8Pin SOIC N T/R
Documentation

Datasheet

FDS8880 Global Supplier

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FDS8880 Specifications

Attribute	Attribute Value

Part Number	FDS8880
Manufacturer	Fairchild
ChipWorker Part#	CW14174368
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	11.6 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0079 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2.5 V
Input Capacitance	1.23 nF
Gate Charge	23.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	11.6 A
Rise Time	27 ns
Input Capacitance (Ciss)	1235pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS8880 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
High performance Trench technology for extremely low RDS (ON)
Low gate charge
High power and current handling capability

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