FDS9953A - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS9953A
Manufacturer

Fairchild
ChipWorker Part#

CW34546996
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET P-CH 30V 2.9A 8Pin SOIC N T/R
Documentation

Datasheet

FDS9953A Global Supplier

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FDS9953A Specifications

Attribute	Attribute Value

Part Number	FDS9953A
Manufacturer	Fairchild
ChipWorker Part#	CW34546996
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	-30.0 V
Current Rating	-2.90 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.095 Ω
Polarity	P-Channel
Power Dissipation	2 W
Input Capacitance	185 pF
Gate Charge	2.50 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	2.90 mA
Rise Time	13 ns
Input Capacitance (Ciss)	185pF @15V(Vds)
Input Power (Max)	900 mW
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS9953A is a PowerTrench® dual P-channel MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). It is suitable for load-switch and battery protection applications.
Fast switching speed
Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
±25V Gate to source voltage
±2.9A Continuous drain current
±10A Pulsed drain current

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