FDT439N - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDT439N
Manufacturer

Fairchild
ChipWorker Part#

CW15960403
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET N-CH 30V 6.3A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FDT439N Specifications

Attribute	Attribute Value

Part Number	FDT439N
Manufacturer	Fairchild
ChipWorker Part#	CW15960403
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	30.0 V
Current Rating	6.30 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.038 Ω
Polarity	N-Channel
Power Dissipation	3 W
Threshold Voltage	670 mV
Input Capacitance	500 pF
Gate Charge	10.7 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	6.30 A
Rise Time	10 ns
Input Capacitance (Ciss)	500pF @15V(Vds)
Input Power (Max)	1.1 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta)
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is Fairchild Semiconductor"s high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
Switching loss improvements
Lower conduction loss
100% Avalanche tested
Smaller stored energy in dynamic characteristics
A lower gate charge (Qg) performance
Improved system reliability in PFC and soft switching topologies

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