FDV304P - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDV304P
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ManufacturerFairchild
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ChipWorker Part#CW5322936
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CategoryMOSFET, MOSFET Transistor
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PackageSOT-23-3
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DescriptionTrans MOSFET P-CH 25V 0.46A 3Pin SOT-23 T/R
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DocumentationDatasheet
Payment Methods and Delivery
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FDV304P Global Supplier
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FDV304P Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDV304P |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW5322936 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Voltage Rating (DC) | -25.0 V |
| Current Rating | -460 mA |
| Power Rating | 350 mW |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.22 Ω |
| Polarity | P-Channel |
| Power Dissipation | 350 mW |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | -25.0 V |
| Continuous Drain Current (Ids) | 460 mA |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 63pF @10V(Vds) |
| Input Power (Max) | 350 mW |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350mW (Ta) |
| expand all | |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FDV303N from Fairchild is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V. FDV303N is designed for battery power applications such as notebook, cellular phones and computers.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Drain to source voltage (Vds) of -25V
- Gate to source voltage of -8V
- Continuous drain current (Id) of -460mA
- Power dissipation (pd) of 350mW
- Low on state resistance of 1.22ohm at Vgs -2.7V
- Operating temperature range -55°C to 150°C
Delivery
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Ordering Information
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