FF200R12KT4 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FF200R12KT4
Manufacturer

Infineon
ChipWorker Part#

CW6630655
Category

IGBT Transistor, IGBT Module
Package

AG-62MM-1
Description

INFINEON FF200R12KT4 IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
Documentation

Datasheet

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FF200R12KT4 Specifications

Attribute	Attribute Value

Part Number	FF200R12KT4
Manufacturer	Infineon
ChipWorker Part#	CW6630655
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	7 Pin
Case/Package	AG-62MM-1
Number of Positions	7 Position
Polarity	NPN
Power Dissipation	1.1 kW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	14nF @25V
Input Power (Max)	1100 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1.1 kW
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Size-Length	106.4 mm
Size-Width	61.4 mm
Size-Height	30.9 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Superior solution for frequency controlled inverter drives
UL/CSA Certification with UL1557 E83336
Operating temperature up to 150 °C
Optimized switching characteristic like softness and reduced switching losses
Existing packages with higher current capability
RoHS compliant
Benefits:
Flexibility
Optimal electrical performance
Highest reliability

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