FGA30S120P - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FGA30S120P
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4904372
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 1300V 60A 348000mW 3Pin(3+Tab) TO-3PN Tube
Documentation

Datasheet

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FGA30S120P Specifications

Attribute	Attribute Value

Part Number	FGA30S120P
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4904372
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	348000 mW
Breakdown Voltage (Collector to Emitter)	1300 V
Input Power (Max)	348 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	348 W
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Features
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High speed switching
Low saturation voltage: VCE(sat) =1.75V @ IC = 30A
High input impedance
RoHS compliant

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