FGA40N65SMD - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FGA40N65SMD
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12209545
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 650V 80A 349000mW 3Pin(3+Tab) TO-3PN Tube
Documentation

Datasheet

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FGA40N65SMD Specifications

Attribute	Attribute Value

Part Number	FGA40N65SMD
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12209545
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	349000 mW
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	42 ns
Input Power (Max)	349 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	349 W
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Size-Length	16.2 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2 generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
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Maximum junction temperature : TJ =175 °C
Positive temperature co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
RoHS compliant

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