FGB20N60SFD - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FGB20N60SFD
Manufacturer

ON Semiconductor
ChipWorker Part#

CW47850636
Category

IGBT Transistor, IGBT Module
Package

TO-263-2
Description

Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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FGB20N60SFD Specifications

Attribute	Attribute Value

Part Number	FGB20N60SFD
Manufacturer	ON Semiconductor
ChipWorker Part#	CW47850636
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-2
Power Dissipation	208000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	34 ns
Input Power (Max)	208 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	208000 mW
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Features
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High current capability
Low saturation voltage: VCE(sat) =2.2V @ IC = 20A
High input impedance
Fast switching: EOFF =8uJ/A
RoHS compliant

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