FMBM5551 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FMBM5551
Manufacturer

ON Semiconductor
ChipWorker Part#

CW26191200
Category

BJT Transistor, BJT
Package

TSOT-23-6
Description

NPN General Purpose Amplifier
Documentation

Datasheet

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FMBM5551 Specifications

Attribute	Attribute Value

Part Number	FMBM5551
Manufacturer	ON Semiconductor
ChipWorker Part#	CW26191200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Frequency	300 MHz
Number of Positions	6 Position
Power Dissipation	0.7 W
Breakdown Voltage (Collector to Emitter)	160 V
hFE Min	80 @10mA, 5V
Input Power (Max)	700 mW
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700 mW
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Size-Length	3 mm
Size-Width	1.68 mm
Size-Height	1.12 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

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