FMMT415TD - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FMMT415TD
Manufacturer

Diodes
ChipWorker Part#

CW36232503
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 100V 0.5A 330mW Automotive 3Pin SOT-23 T/R
Documentation

Datasheet

FMMT415TD Global Supplier

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FMMT415TD Specifications

Attribute	Attribute Value

Part Number	FMMT415TD
Manufacturer	Diodes
ChipWorker Part#	CW36232503
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	40 MHz
Voltage Rating (DC)	100 V
Current Rating	500 mA
Polarity	NPN
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	0.5A
hFE Min	25 @10mA, 10V
hFE Max	25 @10mA, 10V
Input Power (Max)	330 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330 mW
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Size-Width	1.4 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The versatility of this NPN FMMT415TD GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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