FOD817 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FOD817
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9927096
Category

Optocoupler, Optoisolator
Package

DIP-4
Description

DIP4 Through Hole Single Channel 70V 5000Vrms Phototransistor Optocoupler
Documentation

Datasheet

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FOD817 Specifications

Attribute	Attribute Value

Part Number	FOD817
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9927096
Category	Optocoupler, Optoisolator
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	4 Pin
Case/Package	DIP-4
Rise/Fall Time	4µs, 3µs
Number of Channels	1 Channel
Number of Positions	4 Position
Forward Voltage	1.2 V
Power Dissipation	200 mW
Rise Time	4 µs
Isolation Voltage	5000 Vrms
Forward Current	50 mA
Output Voltage (Max)	70 V
Input Current (Min)	50 mA
Maximum Forward Voltage (Max)	1.4 V
Forward Current (Max)	50 mA
Fall Time	3 µs
Fall Time (Max)	18 µs
Fall Time (Max)	18 µs
Operating Temperature (Max)	110 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 mW
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Operating Temperature	-55℃ ~ 110℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2017/07/07
ECCN Code	EAR99

Product Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package..
Features
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AC Input Response (FOD814)
Current Transfer Ratio in Selected Groups:
FOD814: 20-300%
FOD814A: 50-150%
FOD817: 50-600%
FOD817A: 80-160%
FOD817B: 130-260%
FOD817C: 200-400%
FOD817D: 300-600%
Minimum BVCEO of 70 V Guaranteed
Safety and Regulatory Approvals
UL1577, 5,000 VACRMS for 1 Minute
DIN EN/IEC60747-5-5

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