FQA13N50CF - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQA13N50CF
Manufacturer

Fairchild
ChipWorker Part#

CW93769270
Category

MOSFET, MOSFET Transistor
Package

TO-3-3
Description

Trans MOSFET N-CH 500V 15A 3Pin(3+Tab) TO-3PN Tube
Documentation

Datasheet

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FQA13N50CF Specifications

Attribute	Attribute Value

Part Number	FQA13N50CF
Manufacturer	Fairchild
ChipWorker Part#	CW93769270
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	480 mΩ
Polarity	N-Channel
Power Dissipation	218 W
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	15.0 A
Rise Time	100 ns
Input Capacitance (Ciss)	2055pF @25V(Vds)
Input Power (Max)	218 W
Fall Time	100 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	218W (Tc)
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 15 A, 500 V, RDS(on)= 480mΩ (Max.) @ VGS= 10 V,ID= 7.5 A
• Low Gate Charge (Typ.43 nC)
• Low Crss(Typ.20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ.100 ns)

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