FQA19N60 - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFQA19N60
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ManufacturerFairchild
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ChipWorker Part#CW77564776
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CategoryMOSFET, MOSFET Transistor
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PackageTO-3-3
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DescriptionFAIRCHILD SEMICONDUCTOR FQA19N60 Power MOSFET, N Channel, 18.5A, 600V, 380mohm, 10V, 5V
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DocumentationDatasheet
Payment Methods and Delivery
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FQA19N60 Global Supplier
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FQA19N60 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FQA19N60 |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW77564776 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 18.5 A |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 380 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 18.5 A |
| Rise Time | 210 ns |
| Input Capacitance (Ciss) | 3600pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 135 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 W |
| expand all | |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Delivery
Chipworker Certification
Ordering Information
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- Please check the technical specifications of the products when ordering.
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- Invoices are issued in the currency specified, but payment is made in Russian rubles at the exchange rate on the day of payment.
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- Delivery will take between 1 to 2 weeks after the shipment is sent to your country.
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing
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