FQA9N90C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQA9N90C
Manufacturer

Fairchild
ChipWorker Part#

CW85240326
Category

MOSFET, MOSFET Transistor
Package

TO-3-3
Description

Trans MOSFET N-CH 900V 9A 3Pin(3+Tab) TO-3PN Rail
Documentation

Datasheet

FQA9N90C Global Supplier

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FQA9N90C Specifications

Attribute	Attribute Value

Part Number	FQA9N90C
Manufacturer	Fairchild
ChipWorker Part#	CW85240326
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Voltage Rating (DC)	900 V
Current Rating	9.00 A
Drain to Source Resistance (on) (Rds)	1.40 Ω
Polarity	N-Channel
Power Dissipation	280W (Tc)
Drain to Source Voltage (Vds)	900 V
Breakdown Voltage (Drain to Source)	900 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	9.00 A
Input Capacitance (Ciss)	2730pF @25V(Vds)
Power Dissipation (Max)	280W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99
HK STC License	NLR

Product Description

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 9A, 900V, RDS(on)= 1.4Ω@VGS= 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 14pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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