FQB55N10TM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQB55N10TM
Manufacturer

Fairchild
ChipWorker Part#

CW13466082
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR FQB55N10TM MOSFET Transistor, N Channel, 55A, 100V, 0.021Ω, 10V, 4V
Documentation

Datasheet

FQB55N10TM Global Supplier

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FQB55N10TM Specifications

Attribute	Attribute Value

Part Number	FQB55N10TM
Manufacturer	Fairchild
ChipWorker Part#	CW13466082
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	100 V
Current Rating	55.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.021 Ω
Polarity	N-Channel
Power Dissipation	3.75 W
Threshold Voltage	4 V
Input Capacitance	2.10 nF
Gate Charge	75.0 nC
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	55.0 mA
Rise Time	250 ns
Input Capacitance (Ciss)	2730pF @25V(Vds)
Input Power (Max)	3.75 W
Fall Time	140 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.75W (Ta), 155W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
• 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant

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