FQD12N20LTM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD12N20LTM
Manufacturer

Fairchild
ChipWorker Part#

CW12116433
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 200V 9A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

FQD12N20LTM Global Supplier

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FQD12N20LTM Specifications

Attribute	Attribute Value

Part Number	FQD12N20LTM
Manufacturer	Fairchild
ChipWorker Part#	CW12116433
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	200 V
Current Rating	9.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	220 mΩ
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	190 ns
Input Capacitance (Ciss)	1080pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	120 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQD12N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
100% Avalanche tested
16nC Typical low gate charge
17pF Typical low Crss

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