FQD19N10LTM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD19N10LTM
Manufacturer

Fairchild
ChipWorker Part#

CW11708263
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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FQD19N10LTM Specifications

Attribute	Attribute Value

Part Number	FQD19N10LTM
Manufacturer	Fairchild
ChipWorker Part#	CW11708263
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	15.6 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.074 Ω
Polarity	N-Channel
Power Dissipation	50 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	15.6 A
Rise Time	410 ns
Input Capacitance (Ciss)	870pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	140 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQD19N10LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
14nC Typical low gate charge
35pF Typical low Crss

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