FQD20N06TM - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD20N06TM
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8428696
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 60V 16.8A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

FQD20N06TM Global Supplier

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FQD20N06TM Specifications

Attribute	Attribute Value

Part Number	FQD20N06TM
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8428696
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Power Dissipation	2.5 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Rise Time	45 ns
Input Capacitance (Ciss)	450pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQD20N06TM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
11.5nC Typical low gate charge
25pF Typical low Crss

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