FQD2N60CTM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD2N60CTM
Manufacturer

Fairchild
ChipWorker Part#

CW7146273
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

N-Channel 600V 1.9A 4.7Ω SMT Power Mosfet - TO-252-3
Documentation

Datasheet

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FQD2N60CTM Specifications

Attribute	Attribute Value

Part Number	FQD2N60CTM
Manufacturer	Fairchild
ChipWorker Part#	CW7146273
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	1.90 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.6 Ω
Polarity	N-Channel
Power Dissipation	44 W
Threshold Voltage	4 V
Input Capacitance	235 pF
Gate Charge	12.0 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	1.90 A
Rise Time	25 ns
Input Capacitance (Ciss)	235pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQD2N60CTM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Low gate charge (8.5nC)
Low Crss (4.3pF)
100% avalanche tested

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