FQP2N60C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP2N60C
Manufacturer

Fairchild
ChipWorker Part#

CW17313388
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

FAIRCHILD SEMICONDUCTOR FQP2N60C Power MOSFET, N Channel, 2A, 600V, 3.6Ω, 10V, 4V
Documentation

Datasheet

FQP2N60C Global Supplier

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FQP2N60C Specifications

Attribute	Attribute Value

Part Number	FQP2N60C
Manufacturer	Fairchild
ChipWorker Part#	CW17313388
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	2.00 A
Power Rating	54 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.6 Ω
Polarity	N-Channel
Power Dissipation	54 W
Threshold Voltage	4 V
Input Capacitance	235 pF
Gate Charge	12.0 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	25 ns
Input Capacitance (Ciss)	235pF @25V(Vds)
Input Power (Max)	54 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	54 W
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQP2N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved system reliability in PFC and soft switching topologies
Switching loss improvements
Lower conduction loss

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