FQP34N20 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP34N20
Manufacturer

ON Semiconductor
ChipWorker Part#

CW57922433
Category

MOSFET, MOSFET Transistor
Description

Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

FQP34N20 Global Supplier

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FQP34N20 Specifications

Attribute	Attribute Value

Part Number	FQP34N20
Manufacturer	ON Semiconductor
ChipWorker Part#	CW57922433
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Power Dissipation	180 W
Threshold Voltage	5 V
Input Capacitance	3100 pF
Drain to Source Voltage (Vds)	200 V
Rise Time	570 ns
Input Capacitance (Ciss)	2400pF @25V(Vds)
Input Power (Max)	180 W
Fall Time	240 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	18 W
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQP34N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
100% Avalanche tested
60nC Typical low gate charge
55pF Typical low Crss

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