FQP50N06 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP50N06
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3566723
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

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FQP50N06 Specifications

Attribute	Attribute Value

Part Number	FQP50N06
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3566723
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.022 Ω
Power Dissipation	120 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Rise Time	105 ns
Input Capacitance (Ciss)	1180pF @25V(Vds)
Input Power (Max)	120 W
Fall Time	65 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	120000 mW
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Product Lifecycle Status	Not For New Designs
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQP50N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This device is well suited for low voltage applications such as DC/DC converters, high efficiency switching for portable and battery operated products. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved dv/dt capability
Switching loss improvements
Lower conduction loss
175°C Maximum junction temperature rating

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