FQP65N06 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP65N06
Manufacturer

ON Semiconductor
ChipWorker Part#

CW21482196
Category

MOSFET, MOSFET Transistor
Description

MOSFET N-CH 60V 65A TO-220
Documentation

Datasheet

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FQP65N06 Specifications

Attribute	Attribute Value

Part Number	FQP65N06
Manufacturer	ON Semiconductor
ChipWorker Part#	CW21482196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.016 Ω
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Rise Time	160 ns
Input Capacitance (Ciss)	1850pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	105 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 W
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQP65N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved system reliability in PFC and soft switching topologies
Switching loss improvements
Lower conduction loss
175°C Maximum junction temperature rating

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